Le liquide en tant que système ayant un ordre local dynamiqueLESNIK, A. G.Metallofizika (Kiev). 1984, Vol 6, Num 1, pp 64-69, issn 0204-3580Article

Modèle très simple de la cristallisationZRYAKOV, I. N; FEDYANIN, V. K.Žurnal fizičeskoj himii. 1985, Vol 59, Num 2, pp 507-509, issn 0044-4537Article

Comment on the radio emission arising in the crystallization of some liquids in reference to the paper by O. I. Gudzenko et al., Zh. Tekh. Fiz. 55, 612-614 (1985) [Sov. Phys. Tech. Phys. 30, 362 (1985)]KACHURIN, L. G; TORSTVEIT, S.Soviet physics. Technical physics. 1991, Vol 36, Num 5, issn 0038-5662, p. 582Article

Equilibre de phase dans le système phase liquide-phase solide avant l'hétéroépitaxie des couches. II. Création de solutions à composants multiples en équilibre A3B5 par saturation au moyen de la dissolution de la source-support. Limites d'application de la méthodeBOLKHOVITYANOV, YU. B.Žurnal fizičeskoj himii. 1983, Vol 57, Num 7, pp 1698-1703, issn 0044-4537Article

Investigations on the liquid Phase Epitaxial growth of GaAs using Ga-As-Bi solutionJEGANATHAN, K; SARAVANAN, S; BASKAR, K et al.SPIE proceedings series. 1998, pp 325-328, isbn 0-8194-2756-X, 2VolConference Paper

Stabilité de la cristallisation d'une phase homogène dans un système en démixtionGEJLIKMAN, M. B; TEMKIN, D. E.Kristallografiâ. 1985, Vol 30, Num 4, pp 636-646, issn 0023-4761Article

Un laser à injection continu à 0,677 μm, en hétérostructure double InGaAsP/GaAsP à limite séparée, obtenu par épitaxie en phase liquideALFEROV, ZH. I; ARSENT'EV, I. N; VAVILOVA, L. S et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 6, pp 1115-1118, issn 0015-3222Article

Evaluation of binary and ternary melts for the low temperature liuqid phase epitaxial growth of siliconSOO HONG LEE; GREEN, M. A.Journal of electronic materials. 1991, Vol 20, Num 8, pp 635-641, issn 0361-5235Article

The effect of fluid flow due to the crystal-melt density change on the growth of a parabolic isothermal dendriteMCFADDEN, G. B; CORIELL, S. R.Journal of crystal growth. 1986, Vol 74, Num 3, pp 507-512, issn 0022-0248Article

Single crystal growth of Cu_xMo₆Se₈CHANDRA SHEKAR, N. V; GOVINDA RAJAN, K; VISHWANATH, R. N et al.Journal of crystal growth. 1990, Vol 104, Num 2, pp 445-449, issn 0022-0248Article

Proceedings. IV/Materials sciences in space, topical meeting: Committee on Space Research, 26th. plenary meeting, Toulouse, France, 30th. June-11th. July 1986LEGROS, J. C.Advances in space research. 1986, Vol 6, Num 5, issn 0273-1177, 167 p.Conference Proceedings

Modélisation mathématique de la croissance des dendrites dans un liquide surfonduUMANTSEV, A. R; VINOGRADOV, V. V; BORISOV, V. T et al.Kristallografiâ. 1985, Vol 30, Num 3, pp 455-461, issn 0023-4761Article

An approach to pattern formation in crystal growth. I: Needle growth in a simplified modelNARA, S; HAKEN, H.Journal of crystal growth. 1983, Vol 63, Num 2, pp 400-406, issn 0022-0248Article

Fluid flows induced in tall narrow containers by A.C.R.TCAPPER, P; GOSNEY, J. J; JONES, C. L et al.Journal of electronic materials. 1986, Vol 15, Num 6, pp 361-370, issn 0361-5235Article

Geometrical models of interface evolution. III: Theory of dendritic growthKESSLER, D. A; KOPLIK, J; LEVINE, H et al.Physical review. A, General physics. 1985, Vol 31, Num 3, pp 1712-1717, issn 0556-2791Article

Influences of thin active layer in (GaAl)As double-heterostructure lasers grown by liquid-phase epitaxyHAYAKAWA, T; MIYAUCHI, N; SUYAMA, T et al.Journal of applied physics. 1984, Vol 56, Num 11, pp 3088-3095, issn 0021-8979Article

High-efficiency GaP pure green light-emitting diodes of 555 nm fabricated by new liquid phase epitaxy methodKAWABATA, T; KOIKE, S.Applied physics letters. 1983, Vol 43, Num 5, pp 490-491, issn 0003-6951Article

Sumpfphasehydrierung von Kunststoffen. II: Kontinuierliche Versuche = Liquid phase hydrogenation of plastics. II: Continuous experimentsKUNZE, P; WOLFRAM, G; MOTHES, J et al.Plaste und Kautschuk. 1993, Vol 40, Num 5, pp 159-164, issn 0048-4350Article

Processus de transfert de masse au cours de l'obtention des couches épitaxiques de GaxIn1-xPyAs1-y par la méthode du refroidissement échelonné. 1. Croissance à partir d'une phase liquide semi-infinieMOSKVIN, P. P; SOROKIN, V. S.Žurnal fizičeskoj himii. 1984, Vol 58, Num 2, pp 422-427, issn 0044-4537Article

Field equations of a crystallization frontVODAK, F.Czechoslovak journal of physics. 1983, Vol B33, Num 8, pp 930-940, issn 0011-4626Article

Silica glass optical waveguide by liquid-phase doping processTOMARU, S; KAWACHI, M.Japanese journal of applied physics. 1983, Vol 22, Num 11, pp 1691-1693, issn 0021-4922Article

Non-equilibrium gradient-zone crystallization in semiconductorsEVSEEV, B. S.Physica status solidi. A. Applied research. 1988, Vol 109, Num 1, pp K31-K34, issn 0031-8965Article

Influence d'une surface solide sur la formation d'un germe de phase liquide dans une vapeurDOKHOV, M. P.Žurnal fizičeskoj himii. 1984, Vol 58, Num 4, pp 1006-1007, issn 0044-4537Article

Supported liquid-phase rhodium catalyst for acetylene hydrochlorinationPANOVA, S. A; SHESTAKOV, G. K; TEMKIN, O. N et al.Journal of the Chemical Society. Chemical communications. 1994, Num 8, issn 0022-4936, p. 977Article

Validité de l'approche de diffusion dans les modèles des processus de l'électroépitaxie en phase liquideDEMIN, V. N; KUZNETSOV, F. A.Žurnal tehničeskoj fiziki. 1984, Vol 54, Num 5, pp 934-937, issn 0044-4642Article